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| i nchange semiconductor isc website isc & iscsemi is registered tr a demark 1 isc silicon npn power transistor 2sd 928 description c ollector - emitter breakdown voltage - : v (br)ceo = 8 0v( min ) low collector - emitter saturation voltage - : v ce(sat) = 1.0v( m ax) @i c = 3.0a 100% avalanche tested minimum lot - to - lot variations for robust device performance and reliable operation applications designed for use in audio frequency power amplifier applications a bsolute maximum ratings (t a =25 ) symbol parameter val ue unit v cbo collector - b ase v oltage 8 0 v v ceo collector - e mitter v oltage 8 0 v v ebo emitter - b ase v oltage 7 v i c collector c urrent - continuous 4 a i c m collector c urrent - peak 6 a i b b as e c urrent - continuou s 0.5 a p c collector p ower d issipat i on @ t c =25 30 w t j junction temperature 150 t stg storage temperature range - 55~ 150
i nchange semiconductor isc websit e www.iscsemi.com isc & iscsemi is registered trademark 2 isc silicon npn power transistor 2 sd 928 electrical characteristics t c =25 v (br) ceo collector - e mitter breakdown v oltage i c = 10m a ; i b = 0 8 0 v v (br) ebo emitter - b ase breakdown v oltage i e = 1m a ; i c = 0 7 v v c e ( sat ) collector - e mitter s aturation v oltage i c = 3.0 a ; i b = 0.3 a 1.0 v v be( on ) base - e mitter o n v oltage i c = 0.5 a ; v ce = 5 v 1.0 v i c b o collector c utoff c urrent v c b = 8 0 v ; i e = 0 100 a i eb o e mitter c utoff c urrent v eb = 8 v ; i c = 0 100 a h fe dc c urrent g ain i c = 0.5 a ; v ce = 5 v 60 300 f t current - gain bandwidth product i c = 0.5 a ; v ce = 5 v ;f test = 1.0mhz 3.0 mhz |
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